Title :
A Model of Transient Radiation Effects in GaAs Static RAM Cells
Author :
Brown, A.T. ; Massengill, L.W. ; Diehl, S.E. ; Hauser, J.R.
Abstract :
A model to simulate the effects of transient radiation in GaAs static RAM cells has been developed. It accounts for radiation currents through bulk photocurrents and channel conductivity modulation. The model explains upset effects unique to GaAs SRAMs and the results agree with recent experimental data.
Keywords :
Character generation; Circuit simulation; Conductivity; Gallium arsenide; Integrated circuit modeling; Ionizing radiation; Photoconductivity; Predictive models; Pulse generation; Radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1986.4334634
