DocumentCode
886926
Title
A Model of Transient Radiation Effects in GaAs Static RAM Cells
Author
Brown, A.T. ; Massengill, L.W. ; Diehl, S.E. ; Hauser, J.R.
Volume
33
Issue
6
fYear
1986
Firstpage
1519
Lastpage
1523
Abstract
A model to simulate the effects of transient radiation in GaAs static RAM cells has been developed. It accounts for radiation currents through bulk photocurrents and channel conductivity modulation. The model explains upset effects unique to GaAs SRAMs and the results agree with recent experimental data.
Keywords
Character generation; Circuit simulation; Conductivity; Gallium arsenide; Integrated circuit modeling; Ionizing radiation; Photoconductivity; Predictive models; Pulse generation; Radiation effects;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1986.4334634
Filename
4334634
Link To Document