Title :
A Manufacturable 100NS 16K X 1 Radiation Hardened CMOS SRAM
Author :
Lee, J.C. ; Carver, D.A. ; Cherne, R.D. ; Woodbury, D.A.
Author_Institution :
Harris Semiconductor P.O. Box 883, Melbourne, Florida 32901
Abstract :
A fast 16K X 1 bit radiation hardened asynchronous CMOS SRAM is described. The design objectives for the RAM were operation over the full -55°C to 125°C military temperature range, typical address access times of less than 100ns, and total dose hardness to 500K Rad-Si. The process, lithography, design highlights, electrical performance, and radiation characterization are presented.
Keywords :
Degradation; Energy consumption; Lithography; Manufacturing; Radiation hardening; Random access memory; Read-write memory; Semiconductor device manufacture; Temperature distribution; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1986.4334636
