DocumentCode
886981
Title
Avalanching in Single-Event-Upset Charge Collection in Semiconductor Diodes
Author
Ward, A. L.
Author_Institution
U. S. Army Laboratory Command Harry Diamond Laboratories Adelphi, MD 20783-1197
Volume
33
Issue
6
fYear
1986
Firstpage
1551
Lastpage
1559
Abstract
The one-dimensional computer program DIODE has been used to calculate charge collection in single ionizing events in silicon and gallium arsenide diodes. Avalanche multiplication is calculated to occur above a threshold of 3 V in a silicon diode, in agreement with published measurements. Since avalanching may lead to burnout in very-large-scale integration semiconductors, it is a greater danger than the funneling effect of space charge. Carrier recombination is found to be important in gallium arsenide.
Keywords
Breakdown voltage; Charge carrier processes; Current density; Gallium arsenide; Laboratories; Particle tracking; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1986.4334640
Filename
4334640
Link To Document