Title :
Charge Transport by the Ion Shunt Effect
Author :
Knudson, A.R. ; Campbell, A.B. ; Hauser, J.R. ; Jessee, M. ; Stapor, W.J. ; Shapiro, P.
Author_Institution :
Naval Research Laboratory, Washington, D.C. 20375
Abstract :
Information on the quantity of charge transported between two junctions by the ion shunt effect is presented as a function of bias voltages and ionization densities.
Keywords :
CMOS process; Charge measurement; Circuit testing; Current measurement; Energy loss; Helium; Ionization; Laboratories; Logic devices; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1986.4334641
