Title :
Mechanisms Leading to Single Event Upset
Author :
Axness, C.L. ; Weaver, H.T. ; Fu, J.S. ; Koga, R. ; Kolasinski, W.A.
Author_Institution :
Sandia National Laboratories Albuquerque, New Mexico 87185
Abstract :
SRAM cell recovery time following a 140 MeV Krypton strike on a Sandia SRAM is modelled using a two-dimensional transient numerical simulator and circuit code. Strikes at both n- and p-channel "off" drains are investigated. Four principle results are obtained. The recovery time after a strike is strongly dependent on the drive of the restoring transistor. A struck "off" p-channel drain-to-gate capacitive coupling has a significant effect on recovery in SRAM with feedback resistors. Recovery time is approximately linear with LET over LET in the range to 0.4 pC/¿. Finally, an experimental n-channel SEU has been observed in a Sandia SRAM without feedback resistors.
Keywords :
Aerospace simulation; Argon; Circuit simulation; Discrete event simulation; Feedback; Laboratories; Random access memory; Resistors; Single event upset; Transistors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1986.4334644
