Title :
Verifiticion of a SEU Model for Advanced 1-um CMOS Structures Using Heavy Ions
Author :
Cable, J.S. ; Carter, J.R. ; Witteles, A.A.
Author_Institution :
TRW Electronics and Defense Sector One Space Park Redondo Beach, CA 90278
Abstract :
Modeling and test repsults are reported for TRW 1-um CMOS circuits. Excellent agreement between prediction And both Cyclotron and Californium testing has been obtained, and the results indicate that acceptable SEU error rates; can be achieved with a bulk 1u CMOS process. Unique problems in estimating SEU error rates for these advanced technology devices are discussed and key areas for further study are Proposed.
Keywords :
Area measurement; Doping profiles; Feedback; MOS devices; Random access memory; Semiconductor device modeling; Semiconductor process modeling; Shift registers; Space vector pulse width modulation; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1986.4334646
