DocumentCode :
887086
Title :
A low-voltage CMOS bandgap reference
Author :
Vittoz, Eric A. ; Neyroud, Olivier
Volume :
14
Issue :
3
fYear :
1979
fDate :
6/1/1979 12:00:00 AM
Firstpage :
573
Lastpage :
579
Abstract :
The CMOS bandgap voltage reference described here uses the bipolar substrate-transistor and the bipolar-like source-to-drain transfer characteristics of MOS transistors in weak inversion to implement a voltage source that is proportional to absolute temperature (PTAT). A first version of PTAT source is derived from a circuit described previously. A second version is based on a novel cell that can be stacked to obtain the desired voltage. Both versions operate down to 1.3 V with a current drain below 1 /spl mu/A. A stability of 3 mV over 100/spl deg/C has been obtained with a few nonadjusted samples. Experimental results suggest some possible improvements to extend this stability to every circuit.
Keywords :
Field effect integrated circuits; Reference circuits; field effect integrated circuits; reference circuits; Automatic control; Circuit stability; Electrons; FETs; MOSFETs; Photonic band gap; Semiconductor devices; Solid state circuits; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1979.1051218
Filename :
1051218
Link To Document :
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