• DocumentCode
    887086
  • Title

    A low-voltage CMOS bandgap reference

  • Author

    Vittoz, Eric A. ; Neyroud, Olivier

  • Volume
    14
  • Issue
    3
  • fYear
    1979
  • fDate
    6/1/1979 12:00:00 AM
  • Firstpage
    573
  • Lastpage
    579
  • Abstract
    The CMOS bandgap voltage reference described here uses the bipolar substrate-transistor and the bipolar-like source-to-drain transfer characteristics of MOS transistors in weak inversion to implement a voltage source that is proportional to absolute temperature (PTAT). A first version of PTAT source is derived from a circuit described previously. A second version is based on a novel cell that can be stacked to obtain the desired voltage. Both versions operate down to 1.3 V with a current drain below 1 /spl mu/A. A stability of 3 mV over 100/spl deg/C has been obtained with a few nonadjusted samples. Experimental results suggest some possible improvements to extend this stability to every circuit.
  • Keywords
    Field effect integrated circuits; Reference circuits; field effect integrated circuits; reference circuits; Automatic control; Circuit stability; Electrons; FETs; MOSFETs; Photonic band gap; Semiconductor devices; Solid state circuits; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1979.1051218
  • Filename
    1051218