DocumentCode
887086
Title
A low-voltage CMOS bandgap reference
Author
Vittoz, Eric A. ; Neyroud, Olivier
Volume
14
Issue
3
fYear
1979
fDate
6/1/1979 12:00:00 AM
Firstpage
573
Lastpage
579
Abstract
The CMOS bandgap voltage reference described here uses the bipolar substrate-transistor and the bipolar-like source-to-drain transfer characteristics of MOS transistors in weak inversion to implement a voltage source that is proportional to absolute temperature (PTAT). A first version of PTAT source is derived from a circuit described previously. A second version is based on a novel cell that can be stacked to obtain the desired voltage. Both versions operate down to 1.3 V with a current drain below 1 /spl mu/A. A stability of 3 mV over 100/spl deg/C has been obtained with a few nonadjusted samples. Experimental results suggest some possible improvements to extend this stability to every circuit.
Keywords
Field effect integrated circuits; Reference circuits; field effect integrated circuits; reference circuits; Automatic control; Circuit stability; Electrons; FETs; MOSFETs; Photonic band gap; Semiconductor devices; Solid state circuits; Temperature; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1979.1051218
Filename
1051218
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