DocumentCode :
887094
Title :
The Effect of Elevated Temperature on Latchup and Bit Errors in CMOS Devices
Author :
Kolasinski, W.A. ; Koga, R. ; Schnauss, E. ; Duffey, J.
Author_Institution :
Space Sciences Laboratory the Aerospace Corporation P. O. Box 92957, Los Angeles, CA 90009
Volume :
33
Issue :
6
fYear :
1986
Firstpage :
1605
Lastpage :
1609
Abstract :
Equipment for testing microcircuits at elevated temperatures for Single Event Phenomena (SEP) such as upset (SEU) and latchup (SEL) has been developed and measurements on several device types have been performed. Very large changes in cross-section and threshold LET have been observed over the temperature range of 25°C to 120°C for SEU and SEL.
Keywords :
Argon; Cyclotrons; Hardware; Instruments; Laboratories; Land surface temperature; Performance evaluation; Single event upset; System testing; Temperature distribution;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1986.4334649
Filename :
4334649
Link To Document :
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