Schottky-base I/sup 2/L: a high-performance LSI technology

A new I/SUP 2/L technology is described which offers significant advantages in packing density, device performance, and reduced LSI circuit complexity as compared to the conventional I/SUP 2/L. The basic logic gate in this design is a multiinput, multioutput NAND gate which consists of a p-n-p switch and an n-p-n injector. Schottky diodes are formed on the p-n-p base which is merged with the n-p-n (injector) collector. This I/SUP 2/L technology also offers convenient interfacing with other standard IC parts. Experimental data on a test chip indicate a p-n-p current gain of ~50, TTL-type n-p-n current gain of ~80, a delay-power product of 0.5 pJ, and a minimum delay of 10 ns for devices using 7.5 /spl mu/m minimum linewidths.