Title :
Single Event Upset Dependence on Temperature or an NMOS/Resistive-Load Static RAM
Author :
Stapor, W.J. ; Johnson, R.L., Jr. ; Xapsos, M.A. ; Fernald, K.W. ; Campbell, A.B. ; Bhuva, B.L. ; Diehi, S.E.
Author_Institution :
Naval Research Laboratory, Washington, DC 20375
Abstract :
Measurements of temperature effects on SEU rates have been made on NMOS/resistive-load static RAMs using energetic protons and alphas. Results have indicated that SEU cross sections increase with increasing temperature for these parts. Proton and alpha induced nuclear reactions allow upsets to occur below measured LET thresholds.
Keywords :
Electrical resistance measurement; Heating; MOS devices; Particle beam measurements; Particle beams; Read-write memory; Single event upset; Temperature dependence; Temperature measurement; Temperature sensors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1986.4334650
