Title :
Charge-injection device with CCD readout
fDate :
6/1/1979 12:00:00 AM
Abstract :
Describes the use of an n-channel two-level polysilicon process for the fabrication of an experimental 16×16 CID imager. The design of the picture elements had to be modified to minimize blooming and signal crosstalk between adjacent sites. The various readout techniques so far devised use two digital shift registers and, in some cases, decoders for addressing the imager. For standard parallel-injection readout the output signal is inversely proportional to the number of rows and columns. A new readout technique is presented in which the signal is transferred from the column lines into a readout CCD. The amplitude of the output signal is independent of the number of picture elements. Both fixed pattern and random noise are reduced.
Keywords :
Charge-coupled device circuits; Image sensors; charge-coupled device circuits; image sensors; Charge carriers; Charge coupled devices; Crosstalk; Decoding; Fabrication; MOS capacitors; Shift registers; Signal synthesis; Signal to noise ratio; Space technology;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051223