Title :
A simplified self-aligned Al-gate MOS technology for high performance depletion-logic circuits
Author :
De Souza, Pereira J. ; Charry, E.
fDate :
6/1/1979 12:00:00 AM
Abstract :
A simplified fully ion-implanted Al-gate MOS technology for high performance self-aligned depletion load circuits is described. Using a 21 stage-ring oscillator, delay times and speed-power products of 1.1 ns and 1 pJ, respectively, were measured.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Integrated logic circuits; field effect integrated circuits; integrated circuit technology; integrated logic circuits; Analog integrated circuits; Band pass filters; Delay; Etching; Integrated circuit technology; Ion implantation; Logic circuits; Plasma measurements; Resists; Solid state circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051232
