• DocumentCode
    887246
  • Title

    Time minimization for a three-step cyclic process of deposition and diffusion

  • Author

    Arbuckle, Jim

  • Volume
    17
  • Issue
    1
  • fYear
    2004
  • Firstpage
    22
  • Lastpage
    24
  • Abstract
    The optimal layer thickness for minimizing the total time to build a layer with a three-step cyclic process of deposition and diffusion, or "annealing," is determined. Deposition and diffusion processes scale rather differently according to time. This analysis, for the building of a TiN barrier layer, quantifies those times in a model and is then used to find the thickness that minimizes a total time function across more than one process. This model would apply equally to the doping of SiO2 strata.
  • Keywords
    annealing; coating techniques; diffusion barriers; surface diffusion; titanium compounds; SiO2 strata; TiN; TiN barrier layer; annealing; deposition; diffusion; doping; optimal layer thickness; three-step cyclic process; time minimization; Cleaning; Conductivity; Diffusion processes; Doping; Equations; Optimal control; Plasmas; Semiconductor process modeling; Tin; Titanium;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2003.822733
  • Filename
    1265764