Title :
A CMOS bandgap voltage reference
Author :
Tzanateas, G. ; Salama, C.A.T. ; Tsividis, Y.P.
fDate :
6/1/1979 12:00:00 AM
Abstract :
A simple micropower CMOS bandgap voltage reference is described. The reference utilizes MOS devices operating in the weak inversion region in conjunction with a process compatible bipolar device. The voltage reference is insensitive to threshold and mobility variations and is independent of the slope factor which characterizes weak inversion.
Keywords :
Field effect integrated circuits; Reference circuits; field effect integrated circuits; reference circuits; Charge coupled devices; Charge transfer; Delay lines; Electron devices; Photonic band gap; Predictive models; Semiconductor device modeling; Solid state circuits; Temperature; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051234
