Title :
Measurements of Dose to Failure versus Dose Rate for CMOS/NMOS Static RAMS
Author_Institution :
Assurance Technology Corporation 84 South Street Carlisle, Massachusetts 01741
Abstract :
4K×4 CMOS/NMOS static RAMS have been tested to failure at 23, 70, 270 and 1,560 rad (Si) hour. Catastrophic failure was observed to occur at relatively small dose increments after parametric failure. The relation between failure dose and dose rate has been examined by the application of linear system theory.
Keywords :
CMOS integrated circuits; Circuit testing; Ionizing radiation; Legged locomotion; Linear systems; MOS devices; Manufacturing processes; Read-write memory; Satellites; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1986.4334667
