• DocumentCode
    887254
  • Title

    Measurements of Dose to Failure versus Dose Rate for CMOS/NMOS Static RAMS

  • Author

    Schiff, Daniel

  • Author_Institution
    Assurance Technology Corporation 84 South Street Carlisle, Massachusetts 01741
  • Volume
    33
  • Issue
    6
  • fYear
    1986
  • Firstpage
    1697
  • Lastpage
    1701
  • Abstract
    4K×4 CMOS/NMOS static RAMS have been tested to failure at 23, 70, 270 and 1,560 rad (Si) hour. Catastrophic failure was observed to occur at relatively small dose increments after parametric failure. The relation between failure dose and dose rate has been examined by the application of linear system theory.
  • Keywords
    CMOS integrated circuits; Circuit testing; Ionizing radiation; Legged locomotion; Linear systems; MOS devices; Manufacturing processes; Read-write memory; Satellites; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1986.4334667
  • Filename
    4334667
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=887254