DocumentCode :
887382
Title :
Heat flow in n++-n-n+epitaxial GaAs bulk effect devices
Author :
Knight, S.
Volume :
55
Issue :
1
fYear :
1967
Firstpage :
112
Lastpage :
113
Abstract :
The temperature distribution has been computed for n++-n-n+sandwich structures mounted on an infinite half plane of copper. It is found necessary to include the temperature dependence of the thermal conductivities of the semiconductor layers in the calculation.
Keywords :
Conducting materials; Delay effects; Electrons; Equations; Gallium arsenide; Gunn devices; Indium tin oxide; Steady-state; Temperature; Thermal conductivity;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.5410
Filename :
1447340
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=887382
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