Title :
Fall time characteristics of the Darlington transistor switching an inductive load
Author :
Krishna, Surinder
fDate :
8/1/1979 12:00:00 AM
Abstract :
In an inductive circuit the fall time delay of a Darlington transistor can be significantly longer than theory predicts. The increase is shown to be related to the rate of rise in collector voltage. By including this effect, a more general expression for fall time is developed.
Keywords :
Bipolar transistor circuits; Semiconductor switches; bipolar transistor circuits; semiconductor switches; Bipolar transistors; Circuits; DC motors; Delay effects; Genetic expression; Low-frequency noise; Snubbers; Space vector pulse width modulation; Switches; Voltage control;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051263
