DocumentCode
887549
Title
Fall time characteristics of the Darlington transistor switching an inductive load
Author
Krishna, Surinder
Volume
14
Issue
4
fYear
1979
fDate
8/1/1979 12:00:00 AM
Firstpage
776
Lastpage
778
Abstract
In an inductive circuit the fall time delay of a Darlington transistor can be significantly longer than theory predicts. The increase is shown to be related to the rate of rise in collector voltage. By including this effect, a more general expression for fall time is developed.
Keywords
Bipolar transistor circuits; Semiconductor switches; bipolar transistor circuits; semiconductor switches; Bipolar transistors; Circuits; DC motors; Delay effects; Genetic expression; Low-frequency noise; Snubbers; Space vector pulse width modulation; Switches; Voltage control;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1979.1051263
Filename
1051263
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