Title :
An ion-implanted subsurface monolithic Zener diode
Author :
Lui, Sik ; Meyer, Robert G. ; Kwan, Norman
Abstract :
A new ion-implanted subsurface Zener diode structure compatible with bipolar monolithic technology is described. A well-controlled p-implant level determines the breakdown voltage of 6.17 V with a typical measured standard deviation less than 20 mV. The measured long-term stability of the resulting diode was better than 1 mV after continuous operation at 125/spl deg/C for 100h. Temperature compensation of the diode yielded a 6.70 V reference with a temperature coefficient less than 9 ppm//spl deg/C.
Keywords :
Ion implantation; Zener diodes; ion implantation; Breakdown voltage; Circuit theory; Diodes; Electric breakdown; Measurement standards; Operational amplifiers; Stability; Temperature; Transfer functions;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051266
