Title :
The punchthrough device as a passive exponential load in fast static bipolar RAM cells
fDate :
10/1/1979 12:00:00 AM
Abstract :
It is shown that the punchthrough device can be used as a passive exponential load in fast static bipolar RAM cells. The advantages are that the cell standby/read current ratio can be very large (> four decades), and that the cell area can be very small due to the fact that the punchthrough load is a vertical device. In this cell, a very small standby power dissipation(<0.1 μW) is combined with a short access time (<10 ns). A static noise margin calculation for the cell is included. The general standby/read switching behaviour of memory cells with exponential loads is explained. The cell sensitivity to α-particles is discussed.
Keywords :
Bipolar integrated circuits; Integrated circuit technology; Integrated memory circuits; Random-access storage; bipolar integrated circuits; integrated circuit technology; integrated memory circuits; random-access storage; Bipolar transistors; Driver circuits; Flip-flops; Ion implantation; Power dissipation; Read-write memory; Resistors; Schottky diodes; Silicon; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051281
