Title :
Approaches to high performance SITL
Author :
Nishizawa, J. ; Ohmi, T. ; Nonaka, T. ; Mochida, Y.
Abstract :
In order to improve speed performance, the normally configured bipolar mode SIT (BSIT) is introduced to SITL with a new circuit configuration where output Schottky diodes are fabricated to ensure the decoupling between multiple outputs.. The performance of this Schottky SITL is evaluated in the ring oscillator having three fanouts for each state, where the propagation decay is obtained as 2.5 ns with a power dissipation of 100 /spl mu/W.
Keywords :
Bipolar integrated circuits; Bipolar transistors; Integrated circuit technology; Integrated logic circuits; Large scale integration; bipolar integrated circuits; bipolar transistors; integrated circuit technology; integrated logic circuits; large scale integration; Bipolar transistors; Current density; Current-voltage characteristics; Driver circuits; Low voltage; Power dissipation; Propagation delay; Ring oscillators; Schottky diodes; Transconductance;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051288
