DocumentCode
887791
Title
Approaches to high performance SITL
Author
Nishizawa, J. ; Ohmi, T. ; Nonaka, T. ; Mochida, Y.
Volume
14
Issue
5
fYear
1979
Firstpage
873
Lastpage
875
Abstract
In order to improve speed performance, the normally configured bipolar mode SIT (BSIT) is introduced to SITL with a new circuit configuration where output Schottky diodes are fabricated to ensure the decoupling between multiple outputs.. The performance of this Schottky SITL is evaluated in the ring oscillator having three fanouts for each state, where the propagation decay is obtained as 2.5 ns with a power dissipation of 100 /spl mu/W.
Keywords
Bipolar integrated circuits; Bipolar transistors; Integrated circuit technology; Integrated logic circuits; Large scale integration; bipolar integrated circuits; bipolar transistors; integrated circuit technology; integrated logic circuits; large scale integration; Bipolar transistors; Current density; Current-voltage characteristics; Driver circuits; Low voltage; Power dissipation; Propagation delay; Ring oscillators; Schottky diodes; Transconductance;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1979.1051288
Filename
1051288
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