DocumentCode :
887821
Title :
Proton-irradiation study of pulled and float-zone silicon solar cells
Author :
Tauke, R.V. ; Faraday, B.J.
Volume :
55
Issue :
2
fYear :
1967
Firstpage :
234
Lastpage :
235
Abstract :
A comparison of the photovoltaic properties of pulled and float-zone silicon n-on-p solar cells exposed to 4.6 MeV protons at 30°C showed that differences in the residual oxygen impurity did not play a major role in the radiation-induced damage.
Keywords :
Aperture antennas; Crystals; Degradation; Fresnel reflection; Optical films; Phased arrays; Photovoltaic cells; Protons; Semiconductor impurities; Silicon;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.5457
Filename :
1447387
Link To Document :
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