Title :
Influence of polysilicon deposition on fabrication of power polysilicon emitter bipolar transistors
Author :
Austin, Patrick ; Caminade, J. ; Sanchez, Jose L.
Author_Institution :
CNRS, Toulouse, France
fDate :
4/29/1993 12:00:00 AM
Abstract :
The aim was to fabricate a polysilicon emitter bipolar transistor for power applications. To this end, different polysilicon deposition steps compatible with the power bipolar technology and their influence on electrical characteristics were studied.
Keywords :
bipolar transistors; chemical vapour deposition; elemental semiconductors; oxidation; power transistors; silicon; I-V characteristics; LPCVD; SIMS depth profiles; Si; Si-SiO 2; electrical characteristics; polysilicon deposition; power bipolar technology; power polysilicon emitter bipolar transistors; thin interfacial oxide; wafer loading;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930497
