• DocumentCode
    887903
  • Title

    New selfalignment processes for amorphous silicon thin film transistors with polysilicon source and drain

  • Author

    Sugiura, O. ; Kim, C.-D. ; Matsumura, Mieko

  • Author_Institution
    Tokyo Inst. of Technol., Japan
  • Volume
    29
  • Issue
    9
  • fYear
    1993
  • fDate
    4/29/1993 12:00:00 AM
  • Firstpage
    750
  • Lastpage
    752
  • Abstract
    New fabrication processes for selfaligned amorphous silicon TFTs are proposed. The TFTs have a polysilicon source and drain which are formed by ArF excimer laser annealing. They exhibit a field-effect mobility of 0.8 cm2/Vs, threshold voltage of 11 V, and on/off current ratio of higher than 106.
  • Keywords
    amorphous semiconductors; carrier mobility; elemental semiconductors; laser beam annealing; semiconductor technology; silicon; thin film transistors; ArF excimer laser annealing; TFTs; amorphous Si; field-effect mobility; on/off current ratio; polysilicon drain; polysilicon source; selfalignment processes; threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930503
  • Filename
    211246
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=887903