• DocumentCode
    887956
  • Title

    Surface inversion of MOS diodes

  • Author

    Mattauch, R.J. ; Lade, R.W.

  • Author_Institution
    University of Virginia, Charlottesville, Va.
  • Volume
    55
  • Issue
    2
  • fYear
    1967
  • Firstpage
    246
  • Lastpage
    246
  • Abstract
    MOS diodes were fabricated on p-type silicon substrates. The oxide was grown at 1200°C in a steam ambient Capacitance-bias voltage curves were taken before and after elevated-temperature, applied-bias annealing periods. It was found that the device surface could be permanently converted to n-type and then recovered.
  • Keywords
    Aluminum; Annealing; Atmosphere; Capacitance; Diodes; Furnaces; Ovens; Silicon; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5470
  • Filename
    1447400
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=887956