Title :
Surface inversion of MOS diodes
Author :
Mattauch, R.J. ; Lade, R.W.
Author_Institution :
University of Virginia, Charlottesville, Va.
Abstract :
MOS diodes were fabricated on p-type silicon substrates. The oxide was grown at 1200°C in a steam ambient Capacitance-bias voltage curves were taken before and after elevated-temperature, applied-bias annealing periods. It was found that the device surface could be permanently converted to n-type and then recovered.
Keywords :
Aluminum; Annealing; Atmosphere; Capacitance; Diodes; Furnaces; Ovens; Silicon; Substrates; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.5470
