Title :
A 3-D Miniaturization Method for Low-Impedance Designs
Author :
Banerjee, S. Riki ; Zheng, Chenglin ; Drayton, Rhonda Franklin
Author_Institution :
3M Corp., St. Paul
fDate :
5/1/2007 12:00:00 AM
Abstract :
Microstrip interconnects with a V conductor are designed, fabricated, and measured to provide a compact solution for designs requiring low characteristic impedance lines. S-parameter curves are shown up to 35 GHz for 0.5-cm-long lines. The 308-mum-deep V structure produces a 33.8-Omega line with strong standing waves and reflections under 5 dB. To further reduce the impedance, a partial shield is added that results in 6.7 times reduction of signal line width, near elimination of open-end effect, and excellent correlation with a standard 15-Omega microstrip up to 25 GHz. A filter demonstration shows near ideal behavior in the 3 dB response and low return loss when compared to a similar conventional design.
Keywords :
S-parameters; microstrip discontinuities; microstrip filters; 3-D miniaturization method; S-parameter curves; V conductor; low-impedance design; microstrip discontinuities; microstrip interconnects; partial shield; stepped impedance filters; Capacitors; Conductors; Design methodology; Dielectric substrates; Impedance; Inductors; Integrated circuit interconnections; Microstrip components; Microstrip filters; Packaging; Filters; microstrip; microstrip discontinuities; stepped impedance filters;
Journal_Title :
Advanced Packaging, IEEE Transactions on
DOI :
10.1109/TADVP.2007.895608