Title :
15-17 Gbit/s direct modulation of ultrahigh speed compressively strained well VUG SIBH DFB laser
Author :
Mathoorasing, D.
Author_Institution :
France Telecom, CNRS, Bagneux, France
fDate :
4/29/1993 12:00:00 AM
Abstract :
The Letter describes 15-17 Gbit/s direct intensity modulation experiments using an 11 well V-on-U groove (VUG) DFB MQW 1.5 mu m wavelength laser, and reports good static, dynamic and spectral performance: threshold as low as 4.4 mA, relaxation frequency above 18 GHz, damping rate of 0.3 ns, chirp lower than 0.25 nm and microwave bandwidth of 18 GHz are observed in this laser structure, suitable for very high bit rate transmission systems.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; high-speed optical techniques; indium compounds; optical communication equipment; optical modulation; semiconductor lasers; 1.5 micron; 15 to 17 Gbit/s; 18 GHz; 4.4 mA; DFB MQW laser; GaInAs-InP; SCH active structure; V-on-U groove; chirp; damping rate; direct intensity modulation; dynamic performance; microwave bandwidth; relaxation frequency; spectral performance; static performance; threshold; ultrahigh speed compressively strained well VUG SIBH DFB laser; very high bit rate transmission systems;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930516
