Title :
Optical-gain enhancement in resonant-cavity heterojunction bipolar phototransistor through emitter-edge thinning
Author :
Huang, F.Y. ; Zhou, G.L. ; Fan, Z.F. ; Gao, G.B. ; Botchkarev, A.E. ; Sverdlov, B. ; Morkoc, H.
Author_Institution :
Illinois Univ., Urbana, IL, USA
fDate :
4/29/1993 12:00:00 AM
Abstract :
The authors use a lateral emitter resistor in floating base GaAs-InGaAsAlGaAs heterojunction bipolar phototransistors to reduce the surface recombination in the vertical wall of the emitter-base junction and increase the photosensitivity at low injection levels. The same process also reduces the dark current in the reverse biased collector junction.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; phototransistors; GaAs-InGaAsAlGaAs; emitter-base junction; emitter-edge thinning; floating base; heterojunction bipolar phototransistor; lateral emitter resistor; low injection levels; optical gain enhancement; photosensitivity; resonant-cavity; reverse biased collector junction; surface recombination; vertical wall;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930539
