Title :
The bias and gain stabilized integrated linear IGFET circuit
Author :
Hayashi, Yasuhiro ; Tarui, Yoichiro
fDate :
3/1/1967 12:00:00 AM
Abstract :
The bias and gain stabilized integrated linear IGFET circuit is considered. An IGFET is used as a load element in the reactance mode. The experimental result shows that the bias point moves only 0.15 volt over the temperature range from 3°C to 100°C.
Keywords :
Capacitance; Circuit stability; Cutoff frequency; Dielectrics and electrical insulation; Equations; Gain; Moment methods; Polynomials; Shape; Tellurium;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.5502
