Title :
Tellurium TFT´s exceed 100-MHz and one-watt capabilities
fDate :
3/1/1967 12:00:00 AM
Abstract :
Tellurium thin-film triodes were formed on quartz substrates which exhibited gain-bandwidth-products up to 170 MHz. Gain-bandwidth-products of 50 MHz and one-watt dissipation capabilities were exhibited by tellurium TFT´s formed on sapphire substrates.
Keywords :
Autocorrelation; Conductive films; Dielectric substrates; Frequency; Gain measurement; Power dissipation; Power generation; Random processes; Tellurium; Thin film transistors;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.5506
