Abstract :
Efficiencies as high as 7.8 percent yielding 380 mW at 6.8 GHz and output powers up to 1.3 watts at 6.5 GHz (3.6 percent efficiency) have been observed in GaAs p-n junction avalanche diodes. Diode diameters ranged from 2.5 to 7.5 mils with best efficiencies occurring in the range from 2.5 to 4.2 mils, for the circuit used.
