Title :
Charge collection at large angles of incidence [CMOS SRAM]
Author :
McNulty, P.J. ; Beauvais, W.J. ; Reed, R.A. ; Roth, D.R. ; Stassinopoulos, E.G. ; Brucker, G.J.
Author_Institution :
Dept. of Phys. & Astron., Clemson Univ., SC, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
Charge collection exhibited by p-n junctions, which have at least one small dimension, deviates from the geometric assumptions commonly used in SEU (single event upset) testing. The amount of charge collected did not increase with the secant of the angle of incidence. The number of events under the peak in the charge collection spectrum did not decrease as the cosine of the angle of incidence. Both the position of the peak and the number of events under the peak measured at a given angle of incidence depended upon which symmetry axis of the device was chosen to be the axis of rotation
Keywords :
CMOS integrated circuits; SRAM chips; aerospace instrumentation; aerospace testing; environmental testing; integrated circuit testing; radiation effects; radiation hardening (electronics); CMOS SRAM; SEU testing; charge collection; large angles of incidence; p-n junctions; Astronomy; Charge measurement; Current measurement; Modems; NASA; Physics; Random access memory; Rotation measurement; Single event upset; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
