An observation of proton-induced latchup [in CMOS microprocessor]

Author

Nichols, Donald K. ; Coss, James R. ; Watson, R. Kevin ; Schwartz, Harvey R. ; Pease, Ronald L.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

Issue

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1654

Lastpage

1656

Abstract

Proton-induced latchup in a CMOS microprocessor known to have a very low heavy-ion-induced latchup threshold LET was observed. The latchup cross section vs. proton energy for three different bias conditions is displayed. Average measured of latchup current within an 11-ms window following the onset of latchup are provided, as a function of bias and incident proton energy. These data can be interpreted in terms of the present understanding of SEE phenomena

Keywords

CMOS integrated circuits; aerospace testing; integrated circuit testing; microprocessor chips; proton effects; radiation hardening (electronics); CMOS microprocessor; SEU; bias conditions; latchup cross section; proton-induced latchup; CMOS logic circuits; CMOS technology; Circuit testing; Instruments; Laboratories; Logic devices; Microprocessors; Power system protection; Protons; System testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211349

Filename

211349

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=888550