Measurement of the temperature dependence of the I/SUB C/(V/SUB be/) characteristics of integrated bipolar transistors

The temperature dependence of the I/SUB C/(V/SUB be/) relationship of bipolar transistors can be characterized by two parameters η and V/SUB go/. The authors discuss a new method for the determination of these parameters. With this method there is no need for accurate temperature measurements. It is shown that the results fit very well with bandgap-reference temperature characteristics. An analytical method for the calculation of V/SUB g0/ and η from values of the base emitter voltage or the bandgap reference voltage at different temperatures is presented.