DocumentCode
888601
Title
Measurement of the temperature dependence of the I/SUB C/(V/SUB be/) characteristics of integrated bipolar transistors
Author
Meijer, Gerard C M ; Vingerling, Kees
Volume
15
Issue
2
fYear
1980
fDate
4/1/1980 12:00:00 AM
Firstpage
237
Lastpage
240
Abstract
The temperature dependence of the I/SUB C/(V/SUB be/) relationship of bipolar transistors can be characterized by two parameters η and V/SUB go/. The authors discuss a new method for the determination of these parameters. With this method there is no need for accurate temperature measurements. It is shown that the results fit very well with bandgap-reference temperature characteristics. An analytical method for the calculation of V/SUB g0/ and η from values of the base emitter voltage or the bandgap reference voltage at different temperatures is presented.
Keywords
Bipolar transistors; bipolar transistors; Bipolar transistors; Current measurement; Equations; Photonic band gap; Temperature dependence; Temperature measurement; Temperature sensors; Time measurement; Transducers; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1980.1051368
Filename
1051368
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