Title :
Mechanism for single-event burnout of power MOSFETs and its characterization technique
Author :
Kuboyama, S. ; Matsuda, S. ; Kanno, T. ; Ishii, T.
Author_Institution :
Nat. Space Dev. Agency of Japan, Ibaraki, Japan
fDate :
12/1/1992 12:00:00 AM
Abstract :
A novel characterization technique for single event burnout (SEB) of power MOSFETs was developed. The technique is based on a pulse-height analyzer system for charge collection measurement with a modified charge-sensitive amplifier which has a very wide dynamic range. The data obtained by this technique give detailed information about the SEB mechanism of power MOSFETs. The experimental data suggested a position-independent charge collection mechanism along an ion track, and a new parameter for SEB hardness was proposed
Keywords :
insulated gate field effect transistors; ion beam effects; power transistors; radiation hardening (electronics); semiconductor device testing; SEU hardness; characterization technique; charge collection measurement; modified charge-sensitive amplifier; position-independent mechanism; power MOSFET; pulse-height analyzer system; single-event burnout; space application; Capacitors; Charge measurement; Circuits; Condition monitoring; Current measurement; Dynamic range; MOSFETs; Pulse amplifiers; Pulse measurements; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
