• DocumentCode
    888634
  • Title

    An Embeddable Multilevel-Cell Solid Electrolyte Memory Array

  • Author

    Gilbert, Nad E. ; Kozicki, Michael N.

  • Author_Institution
    Desert Microtechnology Associates Inc, Scottsdale, AZ
  • Volume
    42
  • Issue
    6
  • fYear
    2007
  • fDate
    6/1/2007 12:00:00 AM
  • Firstpage
    1383
  • Lastpage
    1391
  • Abstract
    Nonvolatile memory cells based on solid electrolytes have many desirable attributes, including low-voltage and low-current operation and a simple process that allows them to be integrated with conventional CMOS processes with minimal additional masking layers. In this paper, we present a 2-kb memory block/testbed (1024 elements) using solid electrolyte cells. The compact memory design addresses many of the unusual operational issues associated with the solid electrolyte elements and allows for two digital bits to be stored and read from each cell with minimal circuitry. The design was fabricated in 0.18-mum CMOS technology and the simulation and physical data are presented. Multilevel-cell (MLC) operation was demonstrated for a 10-muA reference current with a 437-ns cycle time and sub-40-ns access times
  • Keywords
    CMOS memory circuits; electrolytic devices; random-access storage; solid electrolytes; 0.18 micron; 10 muA; 437 ns; CMOS technology; embeddable multilevel cell; memory array; nonvolatile memory; programmable metallization cell; solid electrolyte; CMOS process; CMOS technology; Circuit simulation; Circuit testing; EPROM; Electrodes; Metallization; Nonvolatile memory; Solids; Tungsten; Multilevel cell (MLC); nonvolatile memory; programmable metallization cell; solid electrolyte;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2007.897172
  • Filename
    4214967