Author :
Kamuro, Setsufumi ; Sano, Kenji ; Kimura, Seiji ; Aoki, Yoshimasa
fDate :
4/1/1980 12:00:00 AM
Abstract :
A 64K (8K/spl times/8) fully-static ROM has been developed using DSA E/D MOS technology. The ROM bit pattern is programmed on the diffusion mask. A new address decoder circuit has been designed and implemented in the device. ROM cell size is 11.5/spl times/15 /spl mu/m, and chip size is 5.05/spl times/5.05 mm.
Keywords :
Field effect integrated circuits; Integrated memory circuits; Read-only storage; field effect integrated circuits; integrated memory circuits; read-only storage; Band pass filters; Circuits; Conductivity; Electrons; Fabrication; Ion implantation; MOSFETs; Operational amplifiers; Read only memory; Substrates;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1980.1051373
