Title :
Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors
Author :
Li, Zheng ; Kraner, H.W. ; Verbitskaya, E. ; Eremin, V. ; Ivanov, A. ; Rattaggi, Monica ; Rancoita, P.G. ; Rubinelli, F.A. ; Fonash, S.J. ; Dale, C. ; Marshall, P.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
The distribution of the A-center (oxygen vacancy) in neutron-damaged silicon detectors was studied using deep level transient spectroscopy. A-centers were found to be nearly uniformly distributed in the silicon wafer depth for medium-resistivity (0.1-0.2-kΩ-cm) silicon detectors and high-resistivity (>4-kΩ-cm) high-temperature (1200°C) oxidized detectors. A positive filling pulse was needed to detect the A-centers in high-resistivity silicon detectors, and this effect was found to be dependent on the oxidation temperature. The A-center was not observed in a sample from a high-temperature oxidation with TCA having a very high carbon content
Keywords :
A-centres; deep level transient spectroscopy; defect electron energy states; elemental semiconductors; neutron effects; oxidation; semiconductor counters; silicon; vacancies (crystal); 1200 C; A-centers; Si detectors; Si:O; deep level transient spectroscopy; elemental semiconductor; high-temperature oxidised detectors; neutron irradiated high resistivity; oxidation temperature; particle detectors; vacancy defect complex profile; Conductivity; Degradation; Gettering; Laboratories; Leakage current; Neodymium; Neutrons; Radiation detectors; Silicon; Spectroscopy;
Journal_Title :
Nuclear Science, IEEE Transactions on
