Study of electrically active lattice defects in Cf-252 and proton irradiated silicon diodes

Author

Trauwaert, M.-A. ; Vanhellemont, J. ; Simoen, E. ; Claeys, C. ; Johlander, B. ; Adams, L. ; Clauws, P.

Author_Institution

IMEC, Leuven, Belgium

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1747

Lastpage

1753

Abstract

The results of a comparative study of electrically active damage introduced in silicon diodes by irradiation with the fission products of a Cf-252 source and with high-energy protons are presented. The influence of substrate doping, oxygen content, and thermal pretreatments on the damage formation is investigated using electrical evaluation of the diode characteristics correlated with deep level transient spectroscopy investigations. Both types of irradiation create the same dominant defect types but with different efficiencies and relative densities. A radiation hardening effect by interstitial oxygen is observed. Both the leakage current and the deep level density show a linear dependence on the irradiating particle fluence

Keywords

deep level transient spectroscopy; elemental semiconductors; interstitials; leakage currents; neutron effects; proton effects; radiation hardening (electronics); semiconductor diodes; silicon; ²⁵²Cf fission products; SEU; Si diodes; deep level density; deep level transient spectroscopy; electrically active lattice defects; elemental semiconductor; high-energy protons; leakage current; proton irradiated; radiation hardening effect; substrate doping; thermal pretreatments; Doping; Ion implantation; Lattices; Protons; Semiconductor diodes; Silicon; Single event upset; Spectroscopy; Substrates; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211362

Filename

211362