Title :
Study of electrically active lattice defects in Cf-252 and proton irradiated silicon diodes
Author :
Trauwaert, M.-A. ; Vanhellemont, J. ; Simoen, E. ; Claeys, C. ; Johlander, B. ; Adams, L. ; Clauws, P.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
12/1/1992 12:00:00 AM
Abstract :
The results of a comparative study of electrically active damage introduced in silicon diodes by irradiation with the fission products of a Cf-252 source and with high-energy protons are presented. The influence of substrate doping, oxygen content, and thermal pretreatments on the damage formation is investigated using electrical evaluation of the diode characteristics correlated with deep level transient spectroscopy investigations. Both types of irradiation create the same dominant defect types but with different efficiencies and relative densities. A radiation hardening effect by interstitial oxygen is observed. Both the leakage current and the deep level density show a linear dependence on the irradiating particle fluence
Keywords :
deep level transient spectroscopy; elemental semiconductors; interstitials; leakage currents; neutron effects; proton effects; radiation hardening (electronics); semiconductor diodes; silicon; 252Cf fission products; SEU; Si diodes; deep level density; deep level transient spectroscopy; electrically active lattice defects; elemental semiconductor; high-energy protons; leakage current; proton irradiated; radiation hardening effect; substrate doping; thermal pretreatments; Doping; Ion implantation; Lattices; Protons; Semiconductor diodes; Silicon; Single event upset; Spectroscopy; Substrates; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
