Title :
The Special Issue on High-Speed Memories
Author :
Kaufman, Bruce A.
Author_Institution :
National Cash Register Company, Electronics Division, Hawthorne, Calif.
Abstract :
The design and performance characteristics of a 128×64 MOS transistor memory is given. The storage cell used operates with a low standby power, 0.1 mW. The memory operates with a 12-ns access time, 35-ns read cycle time, and a 60-ns write cycle time.
Keywords :
Application software; Circuits; Costs; Fabrication; Ferrite films; Hardware; Logic arrays; Military computing; Read-write memory; Transistors;
Journal_Title :
Electronic Computers, IEEE Transactions on
DOI :
10.1109/PGEC.1966.264347
