Title :
A verified proton induced latch-up in space [CMOS SRAM]
Author :
Adam, L. ; Daly, E.J. ; Harboe-Sorensen, R. ; Nickson, R. ; Haines, J. ; Schafer, W. ; Conrad, M. ; Griech, H. ; Merkel, J. ; Schwal, T. ; Henneck, R.
Author_Institution :
ESA-ESTEC, Noordwijk, Netherlands
fDate :
12/1/1992 12:00:00 AM
Abstract :
An instrument on the polar ERS-1 satellite failed following a transient high current consumption. The failure was found to have occurred close to the center of the South Atlantic Anomaly. Ground test showed certain memories to be sensitive to proton-induced latchup. The failure was concluded to be due to latchup during exposure to South Atlantic Anomaly protons. The authors believe that this to be the first time a verified proton-induced latchup in space has been reported
Keywords :
CMOS integrated circuits; SRAM chips; aerospace instrumentation; integrated circuit testing; proton effects; radiation hardening (electronics); CMOS SRAM; SEU; South Atlantic Anomaly; instrument failure; memory device failure; polar ERS-1 satellite; proton induced latch-up; space effects; transient high current consumption; Circuit testing; Instruments; Performance evaluation; Power supplies; Power system transients; Protons; Random access memory; Satellites; Software testing; Telemetry;
Journal_Title :
Nuclear Science, IEEE Transactions on
