A low-voltage and variable-gain distributed amplifier for 3.1-10.6 GHz UWB systems

Author

Shin, Shih-Chieh ; Lin, Chin-Shen ; Tsai, Ming-Da ; Lin, Kun-You ; Wang, Huei

Author_Institution

Graduate Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

16

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

179

Lastpage

181

Abstract

A low-voltage and variable-gain distributed amplifier is presented in this letter. This microwave monolithic integrated circuit amplifier achieves 12-dB gain with a 3-dB frequency band of 1.6-12.1GHz and 6.5-dB noise figure under the bias condition of 0.8-V supply voltage and 6.4-mW total dc power consumption. The gain-control range is from -18dB to +20dB. Resistive metal-oxide-semiconductor field-effect transistors are used as termination resistors to compensate the mismatch due to different bias conditions. From 3.1 to 10.6GHz, the maximum gain ripple of this amplifier is only ±1dB for the gain level between -4 and 20dB.

Keywords

MMIC amplifiers; MOS integrated circuits; distributed amplifiers; gain control; low-power electronics; ultra wideband technology; -18 to 20 dB; 0.8 V; 12 dB; 3.1 to 10.6 GHz; 6.4 mW; 6.5 dB; UWB systems; gain-control range; low-voltage distributed amplifier; maximum gain ripple; metal-oxide-semiconductor field-effect transistors; microwave monolithic integrated circuit amplifier; power consumption; termination resistors; variable-gain distributed amplifier; Distributed amplifiers; Energy consumption; FETs; Frequency; Microwave amplifiers; Monolithic integrated circuits; Noise figure; Power amplifiers; Resistors; Voltage; Low noise amplifier (LNA); SiGe BiCMOS; low voltage; microwave monolithic integrated circuit (MMIC); radio frequency integrated circuit (RFIC); ultra-wideband (UWB); variable gain;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.872134

Filename

1613888