Title :
Single event upset rates in space
Author :
Campbell, A. ; McDonald, P. ; Ray, K.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
SEUs (single event upsets) in the CRRES (Combined Release and Radiation Effects Satellite) MEP (Microelectronic Package Space Experiment) showed a dramatic increase during a solar flare, the influence of the flare varied widely among device types, and a GaAs RAM (random access memory) showed a different response to the proton belts than some 51 RAMs. Corrections to the SEU rate to account for orbital dwell time emphasize the dramatic difference between the rate in the proton belts and the rate due to cosmic ray ions above the belts. In the case of one device, apparent total dose damage resulted in a large increase in upsets due to unreliable device operation
Keywords :
CMOS integrated circuits; aerospace instrumentation; ion beam effects; proton effects; radiation hardening (electronics); random-access storage; CRRES; Combined Release and Radiation Effects Satellite; GaAs devices; Microelectronic Package Space Experiment; RAM; SEU rates in space; Si devices; apparent total dose damage; cosmic ray ions; orbital dwell time; proton belts; solar flare; Belts; Gallium arsenide; Microelectronics; Packaging; Protons; Radiation effects; Read-write memory; Satellites; Single event transient; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
