Single event upset rates in space

Author

Campbell, A. ; McDonald, P. ; Ray, K.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1828

Lastpage

1835

Abstract

SEUs (single event upsets) in the CRRES (Combined Release and Radiation Effects Satellite) MEP (Microelectronic Package Space Experiment) showed a dramatic increase during a solar flare, the influence of the flare varied widely among device types, and a GaAs RAM (random access memory) showed a different response to the proton belts than some 51 RAMs. Corrections to the SEU rate to account for orbital dwell time emphasize the dramatic difference between the rate in the proton belts and the rate due to cosmic ray ions above the belts. In the case of one device, apparent total dose damage resulted in a large increase in upsets due to unreliable device operation

Keywords

CMOS integrated circuits; aerospace instrumentation; ion beam effects; proton effects; radiation hardening (electronics); random-access storage; CRRES; Combined Release and Radiation Effects Satellite; GaAs devices; Microelectronic Package Space Experiment; RAM; SEU rates in space; Si devices; apparent total dose damage; cosmic ray ions; orbital dwell time; proton belts; solar flare; Belts; Gallium arsenide; Microelectronics; Packaging; Protons; Radiation effects; Read-write memory; Satellites; Single event transient; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211373

Filename

211373