Title :
A CDMA Dual-Band Zero-IF Receiver With Integrated LNAs and VCOs in an Advanced SiGe BiCMOS Process
Author :
Simmonds, David ; Cheung, Raymond T. ; Fu, Taoling ; Borowitz, Peter ; Schwab, Richard ; Ruth, Robert ; Karlsen, Per ; Van Zalinge, Klaas
Author_Institution :
Nokia, San Diego, CA
fDate :
6/1/2007 12:00:00 AM
Abstract :
This paper describes one of the first dual PCS- and CEL-band CDMA receivers that includes LNAs and VCOs on a single die. The PCS-band LNA achieves a noise figure (NF) of 1.5dB and IP3 of +7.5 dBm at 16-dB gain. The PCS demodulating mixer achieves an NF of 5 dB, IP3 of +5 dBm and uncalibrated IP2 of +60 dBm. The PCS VCO is capable of -134 dBc/Hz phase noise at 3.9 GHz and 1.25-MHz offset. A copper BiCMOS process was chosen for both performance and cost benefits, compared with lower geometry CMOS
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; MMIC oscillators; code division multiple access; low noise amplifiers; radio receivers; voltage-controlled oscillators; 1.5 dB; 16 dB; 3.9 GHz; 5 dB; BiCMOS process; CDMA; CEL-band receiver; SiGe; code division multiple access; demodulating mixer; direct conversion; dual PCS band receiver; dual-band zero-IF receiver; integrated LNA; integrated VCO; low-noise amplifiers; voltage-controlled oscillators; BiCMOS integrated circuits; Dual band; Germanium silicon alloys; Multiaccess communication; Noise figure; Noise measurement; Personal communication networks; Phase noise; Silicon germanium; Voltage-controlled oscillators; CDMA; direct conversion; low-noise amplifiers (LNAs); receivers; voltage-controlled oscillators (VCOs);
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2007.897154
