• DocumentCode
    888811
  • Title

    Electronically Temperature Compensated Silicon Bulk Acoustic Resonator Reference Oscillators

  • Author

    Sundaresan, Krishnakumar ; Ho, Gavin K. ; Pourkamali, Siavash ; Ayazi, Farrokh

  • Author_Institution
    GE Global Res., Niskayuna
  • Volume
    42
  • Issue
    6
  • fYear
    2007
  • fDate
    6/1/2007 12:00:00 AM
  • Firstpage
    1425
  • Lastpage
    1434
  • Abstract
    The paper describes the design and implementation of an electronically temperature compensated reference oscillator based on capacitive silicon micromechanical resonators. The design of a 5.5-MHz silicon bulk acoustic resonator has been optimized to offer high quality factor (> 100 000) while maintaining tunability in excess of 3000 ppm for fine-tuning and temperature compensation. Oscillations are sustained with a CMOS amplifier. When interfaced with the temperature compensating bias circuit, the oscillator exhibits a frequency drift of 39 ppm over 100degC as compared to an uncompensated frequency drift of 2830 ppm over the same range. The sustaining amplifier and compensation circuitry were fabricated in a 2P3M 0.6-mum CMOS process.
  • Keywords
    CMOS integrated circuits; Q-factor; amplifiers; bulk acoustic wave devices; micromechanical resonators; oscillators; CMOS amplifier; bulk acoustic resonator oscillators; electronic temperature compensated reference oscillator; frequency 5.5 MHz; quality factor; size 0.6 mum; temperature compensating bias circuit; Circuits; Electrostatics; Frequency; Micromechanical devices; Oscillators; Q factor; Silicon; Stability; Temperature distribution; Voltage; MEMS oscillators and temperature compensation; MEMS resonators; Reference oscillators;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2007.896521
  • Filename
    4214984