A Monolithic High-Efficiency 2.4-GHz 20-dBm SiGe BiCMOS Envelope-Tracking OFDM Power Amplifier

Author

Wang, Feipeng ; Kimball, Donald F. ; Lie, Donald Y. ; Asbeck, Peter M. ; Larson, Lawrence E.

Author_Institution

Univ. of California at San Diego, La Jolla

Volume

42

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

1271

Lastpage

1281

Abstract

A monolithic SiGe BiCMOS envelope-tracking power amplifier (PA) is demonstrated for 802.11g OFDM applications at 2.4 GHz. The 4-mm² die includes a high-efficiency high-precision envelope amplifier and a two-stage SiGe HBT PA for RF amplification. Off-chip digital predistortion is employed to improve EVM performance. The two-stage amplifier exhibits 12-dB gain, <5% EVM, 20-dBm OFDM output power, and an overall efficiency (including the envelope amplifier) of 28%.

Keywords

BiCMOS integrated circuits; OFDM modulation; UHF amplifiers; heterojunction bipolar transistors; power amplifiers; silicon compounds; wireless LAN; 802.11 OFDM applications; EVM performance; RF amplification; SiGe; efficiency 28 percent; envelope amplifier; frequency 2.4 GHz; gain 12 dB; monolithic BiCMOS envelope-tracking power amplifier; off-chip digital predistortion; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; OFDM; Power amplifiers; Predistortion; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Envelope tracking; SiGe; orthogonal frequency-division multiplexing (OFDM); power amplifier (PA); wireless local-area network (WLAN);

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2007.897170

Filename

4214986