Title :
High-voltage DIMOS driver circuit
Author :
Pomper, Michael ; Leipold, Ludwig ; Tihanyi, Jenö ; Longo, Hans-Eberhard
fDate :
6/1/1980 12:00:00 AM
Abstract :
High-voltage output driver circuits realized with double-implanted MOS (DIMOS) transistors are presented. Breakdown voltages exceed 100 V. Dynamic bootstrap techniques resulted in circuits combining low power (5 mW) and fast switching times (150 ns) at typical operating conditions of 5 V/50 V, 50 pF, and 16 kHz.
Keywords :
Bootstrap circuits; Field effect integrated circuits; bootstrap circuits; field effect integrated circuits; Costs; Doping; Driver circuits; Electric breakdown; Fabrication; MOSFETs; Resistors; Silicon; Switching circuits; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1980.1051394
