Electronic component preview of low dose rate behavior [HCMOS devices]

Author

David, J.P. ; Barillot, C.

Author_Institution

CERT, ONERA, Toulouse, France

Volume

39

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1892

Lastpage

1898

Abstract

An effort was made to evaluate Texas Instruments HCMOS devices under total dose irradiation, for space applications. The parameter degradations for a dose rate of 8 krad/h are presented. The postirradiation effects at 293 K were recorded for all devices for about one year. Postirradiation effects (PIEs) were observed, and their kinetics are described. Dose rate effects are presented in a discussion of total dose simulation procedures. Thermal annealing was performed with a method similar to the thermally stimulated current method

Keywords

CMOS integrated circuits; aerospace instrumentation; annealing; flip-flops; gamma-ray effects; integrated circuit testing; logic gates; logic testing; radiation hardening (electronics); 293 K; AND gates; HCMOS devices; NAND gates; counters; flip-flops; gamma irradiation; invertors; low dose rate behavior; parameter degradations; postirradiation effects; space applications; thermal annealing; total dose irradiation; Annealing; Circuit testing; Degradation; Electronic components; Instruments; Ionizing radiation; Kinetic theory; Performance evaluation; Temperature; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.211383

Filename

211383