Power measurement setup for large signal microwave characterization at 94 GHz

We report the development of a power measurement setup in order to characterize devices at 94GHz. A very careful calibration of the setup has been performed in order to take into account in a most accurate way the losses through the different parts of the bench and in particular through the tuner. These aware power measurements have allowed to demonstrate state of the art power results on two different devices. We reached at 94GHz an output power of 876mW/mm associated to a 7.5-dB power gain and a power added efficiency (PAE) of 33% on a pseudomorphic high electron mobility transistor (PHEMT) on GaAs substrate. We achieved a 260-mW/mm maximum output power density with 5.9-dB power gain and 11% PAE on an InAsP channel HEMT on InP substrate.