Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus

The authors report energy-dependent proton and Co-60 test results and analysis assessing performance of In_0.53Ga_0.47As photodetectors and In_0.71Ga_0.29As_0.61P_0.39 laser diodes for satellite applications. Displacement damage degradation in the InGaAs photodetector is interpreted using DLTS. Novel calculations of the nonionizing energy loss (NIEL) for protons in InGaAs allow damage assessment using a general technique for evaluating displacement damage in orbit. Data are presented confirming the proton energy dependence of NIEL in a III-V material over the energy range of interest for spacecraft. Effects in optoelectronic devices due to total dose and ionization transients are also discussed