• DocumentCode
    889064
  • Title

    High peak tunnel current density Ga0.47In0.53As Esaki diodes

  • Author

    Cohen, G.M. ; Ritter, D. ; Cytermann, C.

  • Author_Institution
    Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
  • Volume
    31
  • Issue
    17
  • fYear
    1995
  • fDate
    8/17/1995 12:00:00 AM
  • Firstpage
    1511
  • Lastpage
    1512
  • Abstract
    High peak current density Ga0.47In0.53As interband tunnel diodes were fabricated by metal organic molecular beam epitaxy. A room temperature peak-to-valley current ratio of 16 and a peak tunnel current density of 9.2 kA/cm2 were obtained in diodes doped to ~3×1019cm3 on both n-type and p-type sides. A peak-to-valley current ratio of 3.8, and a peak tunnel current density of 93.2 kA/cm2 were obtained in diodes doped to ~1020 cm-3 on both n-type and p-type sides
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; current density; gallium arsenide; indium compounds; tunnel diodes; Esaki diodes; Ga0.47In0.53As; MOMBE; high peak tunnel current density; interband tunnel diodes; metal organic MBE; molecular beam epitaxy; peak-to-valley current ratio;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950979
  • Filename
    464087
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=889064