DocumentCode :
889064
Title :
High peak tunnel current density Ga0.47In0.53As Esaki diodes
Author :
Cohen, G.M. ; Ritter, D. ; Cytermann, C.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Volume :
31
Issue :
17
fYear :
1995
fDate :
8/17/1995 12:00:00 AM
Firstpage :
1511
Lastpage :
1512
Abstract :
High peak current density Ga0.47In0.53As interband tunnel diodes were fabricated by metal organic molecular beam epitaxy. A room temperature peak-to-valley current ratio of 16 and a peak tunnel current density of 9.2 kA/cm2 were obtained in diodes doped to ~3×1019cm3 on both n-type and p-type sides. A peak-to-valley current ratio of 3.8, and a peak tunnel current density of 93.2 kA/cm2 were obtained in diodes doped to ~1020 cm-3 on both n-type and p-type sides
Keywords :
III-V semiconductors; chemical beam epitaxial growth; current density; gallium arsenide; indium compounds; tunnel diodes; Esaki diodes; Ga0.47In0.53As; MOMBE; high peak tunnel current density; interband tunnel diodes; metal organic MBE; molecular beam epitaxy; peak-to-valley current ratio;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950979
Filename :
464087
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=889064
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